Abstract
While the influence of boundary conditions upon current instabilities associated with N-shaped current-voltage characteristics (NNDC) has been convincingly elaborated in the past, see e.g. [1], no similar systematic treatment has been available for the case of S-shaped negative differential conductivity (SNDC). SNDC induced by bulk generation-recombination (g-r) mechanisms occurs in: compensated Ge, CdSe, GaAs and ZnTe at low temperatures [2–5]; amorphous chalcogenide films [6]; pin-diodes [7,8]. Current filamentation resulting from g-r induced SNDC has recently been investigated for infinitely extended systems [9]. The current interest in submicron devices has advanced the need for a theoretical understanding of the influence of finite boundaries upon filamentary SNDC transport. Our analysis shows that surface generation-recombination can be used for efficient control of the SNDC transport properties.
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