Abstract
This paper deals about making a numerical simulator for observing the self-organization phenomenon like current filament formation in the negative differential conductivity (NDC) region of operation in a device using MATLAB environment. Emphasis is laid on choosing the appropriate boundary conditions in simulator to observe the NDC part of the device Current-Voltage (I — V) characteristics along with the appropriate isothermal physical models are included for mobility and the recombination-generation. The simulator used in this paper is designed to observe NDC region in S-shaped NDC (SNDC) devices like BJT and similar conditions can be used to observe the field domains in the N-shaped NDC (NNDC) devices with appropriate changes. Dirichlet and Neumann boundary conditions are applied to BJT and I — V characteristics of the developed device simulator are compared with the commercial available TCAD device simulator (i.e., Sentaurus).
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