Abstract
Transmission electron microscopy observations, cathodoluminescence spectroscopy and spectrum imaging are combined to investigate the emission spectrum in Cu(In,Ga)Se2 (CIGS) thin films with improved spatial resolution. We report direct evidence for a surface layer of wider band gap, which forms spontaneously in CIGS films. The existence of such a surface layer is critical for attaining high efficiency in solar cells based on these chalcopyrite semiconductor compounds.
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