Surface-induced large side-gating phenomenon in GaAs quantum wire transistors and its removal by surface passivation using Si interface control layer

Abstract

Side-gating behaviors of GaAs-based quantum wire transistors (QWRTr’s) were investigated. Using AlGaAs∕GaAs high electron mobility transistor wafer, the QWRTr was fabricated with a nanosized side gate beside the nanowire. Anomalous large side-gating effect was found for the QWRTr. Experiments showed that the large side-gating effect was owing to the strong surface Fermi level pinning around the nanowire, which is caused by a thin layer of deep traps located at the surface. Then, Si interface control layer passivation technology was performed to remove the large side gating.