Abstract
Titanium-nitride films were prepared on aluminum alloy (Al-11 wt.% Si) plates at room temperature by simultaneous ion bombardment and metal vapor deposition (dynamic mixing) using a high current ion source. The films were analysed by means of Auger electron spectroscopy and scanning electron microscopy. The results were compared with those made by metal vapor deposition and ion plating. The process of impurity inclusion in the titanium-nitride films made by dynamic mixing is discussed. Titanium films deposited by electron beam evaporation had high levels of oxygen impurities. However, when the same film was simultaneously bombarded by nitrogen ions, the levels of oxygen impurities decreased in the deposited titanium-nitride films.
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