Abstract
Using in-situ ellipsometry measurements we observed three different surfaces during growth of InGaN(0001) in metal–organic vapor phase epitaxy, which is similar to reports for GaN(0001) or In on GaN in molecular beam epitaxy. Among these surfaces one is identical to the pre-growth GaN surface (for less than 10% In), the second contains about 1 monolayer (ML) of metal (for In between 10 and 35%), and finally a surface with ≤2 ML of metal (for 45% In). Exceeding an In/(Ga+In) input ratio of 80% in the gas phase leads to the formation of In droplets.
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