Abstract
The geometric structure, electronic state and reaction with O 2 of the Si(001) surface with Bi overlayer have been studied by LEED, XPS and UPS. Bi(0001) was grown epitaxially with interface structure of Bi(0001) Si(001) and Bi[2110] Si[110] when Bi was deposited on Si(001)2 × 1 clean surface at room temperature. Subsequent annealing to 570–720 K caused the desorption of Bi, and successive phase transition of the 2 × n (10 > n > 5) surface structure was observed around 1 ML (i.e. atomic ratio of Bi to first layer Si is unity). The effect of an O 2 exposure of 1000 L at 570–720 K depended upon initial Bi coverage. At submonolayer Bi coverage, O 2 exposure induced the oxidation of Si surface and the desorption of Bi. On the other hand, the 2 × n surface which corresponded to about 1 ML were stable against O 2 , indicating strong interaction between Bi and Si. At higher coverage, excess Bi atoms were oxidized.
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