Surface structure analysis of BaSi2(100) epitaxial film grown on Si(111) using CAICISS

Abstract

Geometry and surface structure of a BaSi 2 (100) film on Si(111) formed by reactive deposition epitaxy (RDE) have been investigated using coaxial impact-collision ion scattering spectroscopy and atomic force microscopy. BaSi 2 (100) film can be grown only when the Ba deposition rate is sufficiently fast. It is revealed that a BaSi 2 (100) film grown at 600 °C has better crystallinity than a film grown at 750 °C owing to the mixture of planes other than (100) in the RDE process at higher temperatures. The azimuth angle dependence of the scattering intensity from Ba shows sixfold symmetry, indicating that the minimum height of surface steps on BaSi 2 (100) is half of the length of unit cell. By comparing the simulated azimuth angle dependences for more than ten surface models with experimental one, it is strongly indicated that the surface of a BaSi 2 (100) film grown on Si(111) is terminated by Si tetrahedra. • Surface structure of a BaSi 2 (100) is analyzed using ion scattering spectroscopy. • BaSi 2 (100) film can be grown only when the Ba deposition rate is sufficiently fast. • RDE at 600 °C is the best condition for growth of highly crystalline BaSi 2 (100) film. • We propose that the BaSi 2 (100) film grown on Si(111) is terminated by Si tetrahedra.