Surface strategy design concerning entrapment of chalcogenide onto ETFE substrate and extension to the assembly of memristor

Abstract

Consideration of semi-conductor quantum dots as the suitable band-gap materials has been an effective way to replace the traditional emissive species such as phosphors, lanthanide edifices or organic building blocks. However, very few reports have been performed for the employment of such chalcogenide dots in brain-excitation devices such as memristors. In this work, the colloidal synthesis for the preparation of AgInS2 quantum dots as well as its optical characteristic has been recorded. Further exploration has been focused on the improvement of resistance switching behavior and a layer of manganese dioxide has been covered onto ITO conductive glass by electrochemical deposition. Following step concerns the incorporation of AgInS2 and the toluene solution of PMMA and the PMMA@AgInS2@MnO2 hybrid layer with optimized uniformity and stability has been afforded. Moreover, such functional device has been used to simulate biological synaptic behavior, which will provide an innovative and efficient route for the development of artificial synaptic functions.