Abstract
Silicon carbide (SiC) single crystals, a promising material for high power and high temperature semiconductor devices, have microscopic hollow defects, so-called “micropipes.” Their formation mechanism is not satisfactorily clarified yet. In this paper, a surface step model for micropipe formation in SiC single crystals is proposed, where the strong repulsive interaction between surface steps on the SiC(0 0 0 1) surface is a major driving force for coalescing unit cell size screw dislocations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
