Abstract
We have used the bond-orbital model of Pantelides and Harrison to compute eigenstates for a twelve layer slab of GaAs (110). Dispersion for each of the states is presented as a function of surface wave vector. Also, probability distributions for electrons in each of the surface states are given. These results are in good agreement with those of Joannopoulos and Cohen who did not make the bond-orbital approximation, thus helping to establish the usefulness of this method for surface calculations.
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