Abstract
Careful photoemission studies of surface states on the cleavage GaAs (110) detect no filled states in the band gap. However, empty states pin the surface Fermi level on n -type GaAs at midband gap. Filled states are placed below the valence-band maximum and empty surface states in the upper half of the band gap. Calculations, using the bond orbital model, agree with these results and associate the empty and filled bands with Ga and As, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
