Abstract
The barrier heights, φ B, of Schottky barriers formed between Al, Ni, Cr, Pd, Au, Rh, and Pt metal films and undoped discharge-produced amorphous silicon (a-Si) have been measured. The dependence of φ B on the metal work function, φ M, has been characterized for values of φ M between ≈4.0 and 5.5 eV. Experiments were performed to compare the effects of surface states on φ B of both the undoped (n-type) amorphous and n-type single crystal Si. These effects of surface states are very similar, indicating similar densities and energy distributions of surface states. The densities of surface states on a-Si are found to be ≳10 13cm −2eV −1 which result in the pinning of φ B to values ≳0.7 eV even with φ M as low as 4.0 eV.
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