Abstract
We have studied the surface composition of gallium arsenide and indium phosphide under conditions of physical sputtering and reactive ion beam etching. Samples of Fe-doped (100) GaAs and InP were bombarded with 1-keV Ne+ ions under a varying amount of Cl2 dose. Low-energy ion scattering spectroscopy and sputtered neutral mass spectrometry indicate an increase of the Group V element at the surface upon addition of Cl2 to the system. This effect is believed to be due to segregation of the As and P due to an altered chemical potential at the surface/vacuum interface resulting from chlorine adsorption. The segregation and subsequent volatilization of PClx species leaves aggregates of In/InClx species at the surface, resulting in a roughened surface.
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