Abstract
In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-zero TCR for the TaN thin film resistor (TFR). Through current fitting, the carrier conduction mechanism of the TaN TFR changes from hopping to surface scattering and finally to ohmic conduction for different TaN TFRs with different TaN microstructures. Experimental data of current–voltage measurement under successive increasing temperature confirm the conduction mechanism transition. A model of TaN grain boundary isolation ability is eventually proposed to influence the carrier transport in the TaN thin film resistor, which causes different current conduction mechanisms.
Highlights
With portable electronic devices being popular worldwide, the integration of memory [1-38], display [39-45], and IC circuits [46] has become important in the recent years
DC sweeping was applied to investigate the properties of current–voltage of the TaN thin film resistor
We mainly focused on the current conduction mechanism in the TaN resistive layer
Summary
With portable electronic devices being popular worldwide, the integration of memory [1-38], display [39-45], and IC circuits [46] has become important in the recent years. A high-accuracy thin film resistor (TFR) needs to make a light, thin, short, and small product with a decrease of tolerance for electronic and optical device applications. Tantalum nitride is a mechanically hard, chemically inner, and corrosion-resistant material and has good shock/heat resistance properties [47-50]. These properties make the material attractive for many industrial applications for use as TFR material in portable electronic products. A low or near-zero temperature coefficient of resistance (TCR) is required for the purpose of high reliability in TFR. In order to make the TFR conform to the requirement of a stricter spec for car-used electronic applications, it is a big challenge to develop a material with near-zero TCR for a large temperature region
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