Abstract
In this letter, we propose a novel low-temperature nitridation technology on a tantalum nitride (TaN) thin film resistor (TFR) through supercritical carbon dioxide (SCCO2) treatment for temperature sensor applications. We also found that the sensitivity of temperature of the TaN TFR was improved about 10.2 %, which can be demonstrated from measurement of temperature coefficient of resistance (TCR). In order to understand the mechanism of SCCO2 nitridation on the TaN TFR, the carrier conduction mechanism of the device was analyzed through current fitting. The current conduction mechanism of the TaN TFR changes from hopping to a Schottky emission after the low-temperature SCCO2 nitridation treatment. A model of vacancy passivation in TaN grains with nitrogen and by SCCO2 nitridation treatment is eventually proposed to increase the isolation ability in TaN TFR, which causes the transfer of current conduction mechanisms.
Highlights
With the rapid development of Internet of Things (IOT) technology, the improvement of sensor technologies, such as temperature sensors, gas sensors, and optical sensors, is required to integrate with memory devices [1–23], logic devices, and passive devices [24–28] in one chip in the future
The DC current-voltage (I-V) sweeping was applied to investigate the electrical characteristics of the tantalum nitride (TaN) thin film resistor before and after SCCO2 nitridation treatment
The temperature coefficient of resistance (TCR) value is defined as the ratio of resistance change between different temperatures, TCR = (R1 − R0)/R0*(1/T1 − T0) × 106, where T0 is 30 °C, T1 is 80 °C, R0 is the resistance value at 30 °C, and R1 is the resistance value at 80 °C
Summary
With the rapid development of Internet of Things (IOT) technology, the improvement of sensor technologies, such as temperature sensors, gas sensors, and optical sensors, is required to integrate with memory devices [1–23], logic devices, and passive devices [24–28] in one chip in the future. In addition to the volume of traditional sensor devices being large, the materials used in the manufacture need to be processed at a high temperature, which cannot be compatible with the back end of the line process of integrated circuit (IC) manufacturing technology. Low-temperature and IC technology-compatible materials should be developed for sensor devices and IOT technology. Tantalum nitride is a mechanically hard, chemically inner, and corrosion-resistant material and has good shock/heat-resistant properties. A supercritical phase is peculiar with its characteristics of high penetration of gas and solubility of liquid [29–39]. In order to achieve supercritical ammonia at lower temperature, little ammonia was added into supercritical CO2 fluids, from which the liquid ammonia can attain to the supercritical fluid phase due to the phase close to an ideal solution
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