Surface roughness in XeF2 etching of a-Si∕c-Si(100)

Abstract

Single wavelength ellipsometry and atomic force microscopy (AFM) have been applied in a well-calibrated beam-etching experiment to characterize the dynamics of surface roughening induced by chemical etching of a ∼12nm amorphous silicon (a-Si) top layer and the underlying crystalline silicon (c-Si) bulk. In both the initial and final phase of etching, where either only a-Si or only c-Si is exposed to the XeF2 flux, we observe a similar evolution of the surface roughness as a function of the XeF2 dose proportional to D(XeF2)β with β≈0.2. In the transition region from the pure amorphous to the pure crystalline silicon layer, we observe a strong anomalous increase of the surface roughness proportional to D(XeF2)β with β≈1.5. Not only the growth rate of the roughness increases sharply in this phase, also the surface morphology temporarily changes to a structure that suggests a cusplike shape. Both features suggest that the remaining a-Si patches on the surface act effectively as a capping layer which causes the growth of deep trenches in the c-Si. The ellipsometry data on the roughness are corroborated by the AFM results, by equating the thickness of the rough layer to 6σ, with σ the root-mean-square variation of the AFM’s distribution function of height differences. In the AFM data, the anomalous behavior is reflected in a too small value of σ which again suggests narrow and deep surface features that cannot be tracked by the AFM tip. The final phase morphology is characterized by an effective increase in surface area by a factor of two, as derived from a simple bilayer model of the reaction layer, using the experimental etch rate as input. We obtain a local reaction layer thickness of 1.5 monolayer consistent with the 1.7ML value of Lo et al. [Lo et al., Phys. Rev. B 47, 648 (1993)] that is also independent of surface roughness.