Abstract
Novel surface resonances in doped semiconductor superlattices are shown to exist in association with depletion regions. Self-consistent calculations in a tight-binding formalism for the electronic states of a GaAs-AlGaAs structure exhibit resonance-like states in high-energy minibands. These resonances which extend throughout the superlattice, are strongly affected by applied electric fields, and are concurrent with significant changes in the local density of states. Calculated optical absorption curves show features related to surface resonances, making them accessible to experimental study.
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