Abstract
AbstractCeramic substrate metallization is widely used in electronic device packaging and ceramic circuit board. Currently used methods of ceramic metallization are thick film technology (TFC), activity metal blazing (AMB), direct bonded copper (DBC), and direct plated copper (DPC) etc Here we report a facile approach for the metallization of alumina substrate using an atmosphere plasma spray (APS) process. The APS‐coated copper layer is dense, high purity, and attached very firmly with alumina substrate. The maximum bonding strength is 9.02 MPa, which is higher than that obtained by conventional methods. With EDS mapping, it is found that element interdiffusion occurred at the interface region during coating, which may be one of the reason of high bonding strength. The high dense and purity Cu layer demonstrates quite lower surface resistivity as 8.7 × 10−5Ω⋅mm. The influence of APS current on the quality of Cu coating has been systematically investigated, and the results proved that the method is efficient and economical.
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