Abstract
A systematic investigation of growth interruption in molecular beam epitaxial growth has been carried out. From an analysis of the recovery of the reflection high energy electron diffraction (RHEED) specular beam, the growth rate is found to affect both the absolute value of the time constant of the recovery and the activation energy which is derived from this time constant at different temperatures. Using optimized growth conditions we have performed a systematic optical investigation of GaAs/AlAs single quantum wells with and without growth interruption and conclude that growth interruption of the inverted interface (GaAs on AlAs) is the most important factor in the formation of high quality single quantum wells.
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