Abstract
Degradation of unpassivated InP HEMTs related to the surface of InAlAs was studied. In ungated HEMTs, the drain current decreased after annealing at temperatures as low as 250°C. RBS measurements revealed that lattice disorder was induced on the surface on InAlAs during thermal treatment, which was considered to be due to either the introduction of vacancies or In segregation. Surface-related degradation was effectively suppressed by passivating devices with SiN layers.
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