Abstract
AlOx films as passivation layers for p-type crystalline silicon were prepared by atomic layer deposition with ozone as an oxidant, and the effects of the AlOx film thickness and deposition temperature on the maximum recombination velocity (Smax) were evaluated. Smax is improved by increasing the layer thickness but saturates at a layer thickness of about 30 nm. In the case of samples deposited at room temperature, Smax is improved fivefold when the thickness is increased from 20 to 33 nm. Smax also improved as the deposition temperature was increased to 300 °C then deteriorated when it was further increased to 350 °C. After postdeposition annealing, we obtained an Smax of 8.5 cm/s.
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