Abstract
The forward and reverse I-V characteristics of Anode-Gate diodes passivated with pyrogenic and dry oxide in4H-SiC gate turn-off thyristor (GTO) were investigated by device size dependent measurement. The bulk and surface current component were manifested and separated, where the surface recombination velocity was accurately evaluated as 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> -10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cm/s. Pyrogenic oxide was found more effective than dry oxide to suppress surface traps induced excess carrier recombination and carrier generation at etched p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> n mesa sidewall. Moreover, temperature dependent measurement revealed that excess current of Anode-Gate diodes is primarily attributed to carrier recombination and generation from surface traps. Surface traps dominates the reverse leakage below 125 °C, while electrically active bulk defects contributes to the reverse leakage simultaneously at elevated temperature. Finally, the influence of passivation on the 4H-SiC GTOs forward characteristics was demonstrated. Higher gate trigger current needed to switch from blocking to conduction state for the 4H-SiC GTOs with dry oxide passivated Anode-Gate mesa sidewall.
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