Abstract
The first stage of chemical vapor deposition of SiO2 from SiH4 and O2 on InP has been investigated. SiH4 is shown to interact only with an oxidized InP surface. It plays the part of an interface deoxidizing agent, restoring the covalent bonding of surface InP atoms. Oxygen originally bonded to InP becomes bonded to the silicon deposit in silica-like bonds. This phenomenon has been used as an in situ surface cleaning step in the processing of metal-insulator-semiconductor InP structures. It leads to a strong decrease of the hysteresis in capacitance-voltage curves, demonstrating improvement of the interface properties.
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