Abstract
We deposit hydrogenated amorphous silicon (a-Si:H) on a novel ‘‘macroscopic’’ trench substrate using both remote hollow cathode (HC) silane discharges and reactive magnetron sputter (RMS) deposition sources. Both methods produce state of the art optoelectronic quality a-Si:H. We analyze the surface coverage profiles in terms of the surface reaction probability β, using a Monte Carlo simulation to correct for particle reflection and loss. We also measure the deposited film quality as a function of position in the trench. For low power silane HC deposition, we find β=0.28±0.05, whereas for the RMS case β=0.97±0.05. In contrast to the prevailing thinking in the a-Si:H field, this result demonstrates that β is not universally correlated with film quality. We discuss the role of energetic particle bombardment in RMS that permits high quality films to be deposited despite the high precursor reactivity.
Published Version
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