Abstract
The surface kinetic information of metalorganic vapor phase epitaxy (MOVPE) is difficult to obtain, because growth rate is normally limited by diffusional mass-transfer rate. In this study, by using a selective area growth (SAG) technique, the surface kinetics has been successfully clarified for InP and InAs growth. The temperature dependence of surface reaction rate constant (ks) was examined, and it revealed that for both compounds ks continuously increases with activation energies of 20.1 kJ/mol for InP and 15.0 kJ/mol for InAs. The sticking probability of indium species, converted from ks, was in the range of 0.54–0.79. This is two or three times that of gallium species during GaAs MOVPE. For indium-related binary compounds, the ks of InP is always larger than that of InAs. This kinetic information suggests that group V elements have a significant effect on the ks of III–V binary compounds. These preliminary results show that indium species have quite different reactivities in phosphorus and arsenic sites, which could be fundamental for the kinetic analysis of ternary and quaternary compounds, such as InAsP and InGaAsP.
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