Surface Properties of CH3NH3PbI3 for Perovskite Solar Cells.

Abstract

Perovskite solar cells (PSCs) have attracted considerable interest because of their high potential for solar energy conversion. Power conversion efficiencies of the PSCs have rapidly increased from 3.8 to over 20% only in the past few years. PSCs have several similarities to dye-sensitized solar cells in their device compositions; mesoporous TiO2 (mp-TiO2) is sensitized by light-absorbing components and placed into a medium containing hole transporting materials (HTMs). On the other hand, the perovskite materials for the light-harvesting, for example, CH3NH3PbI3 (MAPbI3), have a greater advantage for the photovoltaic applications; extremely long photocarrier diffusion lengths (over 1 μm) enable carrier transports without singnificant loss. In this respect, the surface states, that can be possible recombination centers, are also of great importance. Availability of solution processes is another important aspect in terms of low cost fabrication of PSCs. Two-step methods, where PbI2 is first introduced from solution onto a mp-TiO2 film and subsequently transformed into the MAPbI3 by the exposition of a solution containing MAI, suggest that use of such a high PbI2 concentration is crucial to obtain higher performance. The experiments also indicate that the PbI2-rich growth condition modifies TiO2/ or HTM/MAPbI3 interfaces in such a way that the photocarrier transport is improved. Thus, the characteristics of surfaces and interfaces play key roles in the high efficiencies of the PSCs. In this Account, we focus on the structural stability and electronic states of the representative (110), (001), (100), and (101) surfaces of tetragonal MAPbI3, which can be regarded as reasonable model HTM/MAPbI3 interfaces, by use of first-principles calculations. By examining various types of PbIx polyhedron terminations, we found that there are two major phases on all of the four surface facets. They can be classified as vacant- and flat-type terminations, and the former is more stable than the latter under thermodynamically equilibrium conditions. More interestingly, both terminations can coexist especially on the more probable (110) and (001) surfaces. Electronic states, that is, projected density of states, of the stable-vacant and PbI2-rich-flat terminations on the two surfaces are almost the same as that in bulk MAPbI3. These surfaces can contribute to the long carrier lifetime actually observed for the PSCs because they have no midgap surface states. Furthermore, the shallow surface states on the (110) and (001) flat terminations can be efficient intermediates for hole transport to HTMs. Consequently, the formation of the flat terminations under the PbI2-rich condition will be beneficial for the improvement of PSC performance.