Abstract
The as-deposited and annealed Ga-doped ZnO (GZO) thin films were obtained by magnetron sputtering. The structural information and surface morphologies were examined by x-ray diffraction (XRD) and atomic force microscopy (AFM). The film morphologies were further analyzed by the grayscale fractal study, which could offer full perspectives about the cluster change (like cluster size, cluster amount, cluster height, and so forth) of GZO films with different annealing temperatures. Consequently, the change of cluster amount and size on/in films could be obtained by the fractal spectra. Furthermore, the stress of prepared thin films is also calculated to investigate the relationship between stress and surface morphology after annealing process. For example, it was found the film annealed at 200 °C exhibited the slowest change of fractal spectrum (changes with grayscale) and consequently the smallest value of in-plane stress.
Published Version
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