Abstract

In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.

Highlights

  • Semiconducting nanowire (NW) research has attracted the attention of nanoscience and nanotechnology community due to their fascinating features such as high aspect ratio, high surface area, quantum confinement and the ability to control their crystal structure during growth

  • The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode

  • We investigate gallium phosphide (GaP) NWs to broaden the understanding of their surface properties

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Summary

Introduction

Semiconducting nanowire (NW) research has attracted the attention of nanoscience and nanotechnology community due to their fascinating features such as high aspect ratio, high surface area, quantum confinement and the ability to control their crystal structure during growth. We investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. Variations of surface potentials were observed in a single GaP NW with WZ/ZB segments. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs. 1.

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