Abstract
The present paper has proposed a dielectric modulated gate underlap dopingless tunnel field effect transistor (DM-GUD-TFET). In the proposed device, a cavity is introduced on side of the gate metal to attain high sensitivity for biomedical applications. The immobilization of biomolecules within the cavity induces the variation in surface potential. The present work has analyzed different parameters affecting the electrical characteristics of the device which include a change in spacer length, variation in applied voltages (Vds and Vgs), and channel material. The modeling output characteristics have been compared with simulated outcomes for validating results. The potential model is obtained by categorizing the structure into ten sections counting source-drain depleted sections. The surface potential of each section is resolved using 1-dimennsional and 2-dimensional Poisson’s eq. (P.Eq.), respectively. The different values of dielectric constant and charge density are used for recreating the biomolecules for simulation in Silvaco ATLAS tool.
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