Abstract
In this paper, a novel doping-less tunneling field-effect transistor with Si0.6Ge0.4 heterojunction (H-DLTFET) is proposed using TCAD simulation. Unlike conventional doping-less tunneling field-effect transistors (DLTFETs), in H-DLTFETs, germanium and Si0.6Ge0.4 are used as source and channel materials, respectively, to provide higher carrier mobility and smaller tunneling barrier width. The energy band and charge carrier tunneling efficiency of the tunneling junction become steeper and higher as a result of the Si0.6Ge0.4 heterojunction. In addition, the effects of the source work function, gate oxide dielectric thickness, and germanium content on the performance of the H-DLTFET are analyzed systematically, and the below optimal device parameters are obtained. The simulation results show that the performance parameters of the H-DLTFET, such as the on-state current, on/off current ratio, output current, subthreshold swing, total gate capacitance, cutoff frequency, and gain bandwidth (GBW) product when Vd = 1 V and Vg = 2 V, are better than those of conventional silicon-based DLTFETs. Therefore, the H-DLTFET has better potential for use in ultra-low power devices.
Highlights
Conventional metal oxide semiconductor field-effect transistors (MOSFETs) with carrier diffusion drift are susceptible to the short-channel effect when device sizes decrease, which can increase the power consumption and off-state leakage current [1,2,3]
The channel region used the high carrier mobility material Si0.6 Ge0.4, and the forbidden bandwidth and band structure changed with the changes in the germanium content, which resulted in higher carrier mobility and smaller tunneling barrier width
The narrower the than tunneling the higher the could point between the source the channel was lower that ofbarrier, the doping-less tunneling field-effect transistors (DLTFETs), which allow more electrons to tunnel from the source to the channel
Summary
Conventional metal oxide semiconductor field-effect transistors (MOSFETs) with carrier diffusion drift are susceptible to the short-channel effect when device sizes decrease, which can increase the power consumption and off-state leakage current [1,2,3]. The switching ratio and frequency and noise margin characteristics are far from ideal in TFETs, and the fabrication processes are complicated, which can limit their application in digital circuits. Frequency characteristics far from ideal in TFETs, processes of TFETs, a doping-less tunnel field-effect transistor (DLTFET). The devices more innovatively the can development of fabrication such as the etching process, disadvantages of DLTFETs are their larger off-state current, power consumption, and lower epitaxial growth process, and atomic layer deposition (ALD) process. 0.6Ge0.4 heterojunction (H-DLTFET) is proposed using TCAD off-state current, power consumption, and lower switching ratio, so their use is not competitive [23]. Compared the narrow bandgap semiconductor material germanium and the high carrier mobility material with conventional DLTFETs, H-DLTFETs differ in that their source regions and channel regions use the.
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