Abstract
The direct surface potential measurement of reconfigurable graphene p-n junctions in exfoliated graphene deposited on a buried split-gate test structure is reported. The experimental geometry permitted direct imaging of the Fermi level variation across the electrostatically-doped p-n junction using Kelvin Probe Force Microscopy (KPFM). The measured graphene p-n junction doping profile and junction width are in good agreement with predictions from finite-element calculations.
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