Abstract
Abstract Plasmonic nanostructures have garnered tremendous interest in enhanced light–matter interaction because of their unique capability of extreme field confinement in nanoscale, especially beneficial for boosting the photoluminescence (PL) signals of weak light–matter interaction materials such as transition metal dichalcogenides atomic crystals. Here we report the surface plasmon polariton (SPP)-assisted PL enhancement of MoS2 monolayer via a suspended periodic metallic (SPM) structure. Without involving metallic nanoparticle–based plasmonic geometries, the SPM structure can enable more than two orders of magnitude PL enhancement. Systematic analysis unravels the underlying physics of the pronounced enhancement to two primary plasmonic effects: concentrated local field of SPP enabled excitation rate increment (45.2) as well as the quantum yield amplification (5.4 times) by the SPM nanostructure, overwhelming most of the nanoparticle-based geometries reported thus far. Our results provide a powerful way to boost two-dimensional exciton emission by plasmonic effects which may shed light on the on-chip photonic integration of 2D materials.
Highlights
Plasmonic nanostructures have garnered tremendous interest in enhanced light–matter interaction because of their unique capability of extreme field confinement in nanoscale, especially beneficial for boosting the photoluminescence (PL) signals of weak light– matter interaction materials such as transition metal dichalcogenides atomic crystals
Without involving metallic nanoparticle–based plasmonic geometries, the suspended periodic metallic (SPM) structure can enable more than two orders of magnitude PL enhancement
Plasmonic nanocavities are regarded as ideal candidates for both PL enhancement and subwavelength integration of light sources because of the unique capability of pronounced local resonances and extreme field concentration at nanoscales [12,13,14,15]
Summary
The monolayer MoS2 was synthesized by an improved ambient pressure CVD system with three furnaces. The S and MoO3 powers were loaded at the central of furnace 1 and 2 in the outer and inner quartz tube, respectively. The system was pumped down to 5 Pa and injected Ar to atmospheric pressure This process was repeated three times to remove oxygen in the system. The temperature of furnace 2 and 3 were raised up to 630 °C and 750 °C in 25 min and were held for 15 min, respectively. The PMMA/MoS2 film was separated from the SiO2/Si substrate, and picked up with a PET sheet and put it in deionized water to clean three times. To make the sample and substrate bond more firmly and avoid oxidation, the PMMA/MoS2/SiN needed to be heat at 150 °C for 10 min in the glove box. The sample was put into acetone about 5 min to remove the PMMA
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