Abstract
The optical and carrier transport properties of GaInNAs layers grown by molecular beam epitaxy on n-GaAs substrates are studied by surface photovoltage (SPV) spectroscopy combined with photoluminescence (PL) measurements data. The SPV spectra clearly show a red shift of the band gap energy with respect to the band gap of GaAs, which is in line with the PL results. The combined analysis of the SPV amplitude and phase spectra has allowed determining the residual doping type in the layer. The minority carrier diffusion length was assessed by means of the method called “constant SPV”.
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