Abstract
A systematic evaluation of deploying GaxCeyOz passivation layer (PL) on Si substrate subjected to postdeposition annealing in forming gas-oxygen-forming gas ambient at different temperatures (600–900 °C) was carried out. The inclusion of hydrogen and/or nitrogen ions, in addition to their attachment to oxygen vacancies and Si dangling bonds, has been reported. The attachment became more prominent at 600 and 700 °C while oppositely, the incoming oxygen ions acquired adequate energy to break the attachment at/beyond 800 °C. Therefore, it is conceivable that the GaxCeyOz PL annealed at/beyond 800 °C have attained a thicker interfacial layer (IL). The acquisition of a higher Nss has been attributed to the de-passivation of Si dangling bonds by the excessive hydrogen ions present at the interface. The potential of utilizing GaxCeyOz PL annealed at 700 °C as a PL for metal-oxide-semiconductor applications was inferred through a thorough electrical analysis conducted in this work.
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