Abstract
All-inorganic perovskites consisting of only inorganic elements have been recently considered as highly stable semiconductors for photoactive layer of optoelectronics applications. However, the formation of high-quality thin film and trap-reduced interface has still remains an important task, which should be solved for improving the performances of all-inorganic perovskite-based photovoltaics. Here, we adopted facile method that could reduce charge-carrier recombination by depositing a passivation agent on the top surface of the CsPbBr3 all-inorganic perovskite layer. We also found that the CsPbBr3 perovskite photovoltaic prepared from surface treatment method using n-octylammonium bromide provides an improved stability in ambient environment and 1-sun illuminating condition. Therefore, the perovskite photovoltaics fabricated from our approach offered an improved power conversion efficiency of 5.44% over that of the control device without surface treatment (4.12%).
Highlights
Perovskite photovoltaics (PPVs) have been enormously explored as next-generation energy harvesting devices during the last decades. Their power conversion efficiencies (PCEs) have been reported to be over 25% [1], which is competitive with the efficiencies of conventional silicon photovoltaics
Investigations on module fabrication [2], device encapsulation [3] and cost-effective production [4] of materials have been initiated in order to realize large-scale manufacturing as well as a highly stable operation under light illumination, which are required for the commercialization of PPVs
We revealed that the trap density of CsPbBr3 PPV is reduced after surface treatment using octylammonium bromide (OABr), leading to the facilitated charge transfer and extraction at perovskite/top electrode interface in PPV
Summary
Perovskite photovoltaics (PPVs) have been enormously explored as next-generation energy harvesting devices during the last decades. Their power conversion efficiencies (PCEs) have been reported to be over 25% [1], which is competitive with the efficiencies of conventional silicon photovoltaics. We report efficient and stable all-inorganic CsPbBr3 PPVs by incorporating surface treatment using n-octylammonium bromide (OABr) [14,15,16,17]. CsPbBr3 PPV after surface treatment was investigated using light-intensity dependent photovoltaic performances, photoluminescence (PL) measurements, and trap density analysis. We revealed that the trap density of CsPbBr3 PPV is reduced after surface treatment using OABr, leading to the facilitated charge transfer and extraction at perovskite/top electrode interface in PPV.
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