Surface Orientation Dependence of SiC Oxidation Process Studied by <i>In Situ</i> Spectroscopic Ellipsometry

Abstract

We performed real-time observations of SiC oxidation at various temperatures by in-situ spectroscopic ellipsometry using a Si-face, an a-face and a C-face substrates. We calculated oxide growth rates based on “Si-C emission model,” taking into account the emission of interfacial Si and C atoms from the SiC–SiO2 interface. The calculated values well reproduced the oxide thickness dependence of oxide growth rates. We discussed the SiC oxidation mechanism using the parameters deduced from the calculations.