Abstract
We have tried to apply the oxidation model of SiC proposed previously, termed ‘Si-C emission model’, to the oxide growth rate at various oxidation temperatures. We have found that the model well reproduces the oxide thickness dependences of oxide growth rates for all of the temperatures measured for both of the SiC Si- and C-faces. We have estimated the temperature dependence of oxide depth profiles of Si and C interstitials by using the Si-C emission model, and discussed the structure at/near the SiC–oxide interface.
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