Model Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission Model

Abstract

We found that the ‘Si and C emission model’ that we proposed as an oxidation model of SiC could not reproduce the initial oxide growth rates of SiC at sub-atmospheric pressures. The comparison between calculated and observed growth rates suggests that the oxide growth on the oxide surface is enhanced in the initial oxidation stage and thus our oxidation model is inaccurate in the description on the surface oxidation. Accordingly, we reconsidered the parameters on surface oxidation and, as a result, found that a much enlarged oxygen concentration on the oxide surface is necessary for solving the discrepancy between calculated and observed growth rates.