Abstract
CuInSe2 surfaces can be cleaned by bombardment with Ar ions at glancing incidence and with energies up to 1.5 keV without change in composition. At near-normal incidence a slight depletion of Cu is observed. The surface crystallinity can be partially restored by annealing to ∼550 °C, without preferential evaporation of an element. On Ar+-cleaned and annealed surfaces, single-crystal low-energy electron diffraction patterns of CuInSe2 have been produced for the first time.
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