Abstract
Agglomeration of Si atoms on the a-Si surface and the low-temperature crystallization of Si, Ge and SixGe1-x films by SR soft x-ray irradiation using 2.4m-length undulator source and the effect of the combination of the excitation of core electron by laser plasma soft x-ray (LPX) and Si surface nano-modification by Xe+ that is generated during LPX irradiation on the crystallization of a-Si are reviewed. The elementary process of the soft x-ray irradiation is the atom-diffusion following the localized excitation of the core electrons and the generation of Coulomb repulsion. For the low-temperature crystallization, the quasi-nuclei are formed via the elementary process. The temperature during the crystallization of Si or Ge by soft x-ray irradiation is approximately one-hundred °C lower than that by the conventional rapid thermal annealing.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call