Abstract
Nanostructured thin films on a silicon substrate have been obtained by the method of high-frequency repetitively pulsed (f ~ 10—15 кГц) laser action with a wavelength of 1.064 μm and a power density q = 54 MW/cm2 on La0.4Ba0.6CoO3 ceramics at a pressure in the vacuum chamber p = 2.2 Pa. The morphology of the obtained films was studied using atomic force microscopy. The features of the transmission spectra in the visible, near, and mid-IR regions are revealed. An analysis of the electrical properties of the La0.4Ba0.6CoO3 structure was carried out.
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