Abstract
The morphology of a hydrogenated Si(310) surface annealed in As4 vapors is studied by fast electron diffraction and scanning tunneling microscopy. It is established that, at annealing temperatures above 700°C, the surface morphology is changed; namely, (311) facets and steps with heights equal to several interplanar distances are formed. At temperatures below 600°C, there is no surface faceting and the height of steps is equal to two interplanar distances. This makes this surface suitable for growing A2B6-based heterostructures.
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