Abstract
The time evolution of the surface morphology during growth of GaAs(110) by molecular-beam epitaxy is studied using Nomarski and atomic force microscopy. Depending on the growth temperature and ${\mathrm{As}}_{4}$ overpressure, different types of growth instabilities are observed: large three-dimensional pyramidal features develop under As-deficient growth conditions, whereas step bunching takes place under As-rich conditions. In addition, a crossover from step bunching, attributed to a negative step-edge barrier, to unstable growth typical of a positive step-edge barrier, takes place under As-deficient conditions as the film thickness increases. Under suitable growth conditions, self-organization of the microscopic features during growth leads to the creation of a highly unusual, well-ordered pattern on the surface. We discuss the microscopic origin of the observed instabilities with the help of recent theoretical and experimental results.
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