Abstract
Growth of GaAs by molecular beam epitaxy on (110) substrates vicinal to (111)A has been systematically studied by atomic force and Nomarski microscopy at different As/Ga flux ratios, substrate temperatures and growth rates. Depending on the growth conditions, a striking variety of morphological instabilities have been found that range from step bunching in the Ga-supply limited regime to creation of long-range, well-ordered patterns of three-dimensional pyramidal features on the surface under As-deficient conditions. We discuss the microscopic origin of the morphological instabilities and self-organization of the surface features in terms of growth modes, relative adatom populations and step-attachment probabilities.
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