Abstract
In this study a comparison of the topography of BiFeO3 (BFO) thin films deposited on tantalum pentoxide substrates of different thicknesses is provided. The Ta2O5 substrates had a roughness increasing with the film thickness. The relationship between substrates of different topography but the same composition with the quality of the growing bismuth ferrite film is estimated. For the first time the topography estimation of BFO on Ta2O5 is presented. The difference in temperature expansion coefficients leads to intensive evaporation of bismuth ferrite from the surface during annealing. XPS analysis is provided for asdeposited and annealed BFO layers.
Highlights
Data storage and processing centers are large consumers of energy resources due to the development of cloud storage services, social networks, mobile applications
Thin films of Ta2O5 may be utilized as protective players in various sensors, detectors and other electronics which might benefit from extra shielding against aggressive media and corrosion
Low absorption coefficient along with large refractive index is absolutely essential when it comes to antireflective coatings which is why Ta2O5 find its use in solar cells fabrication as well
Summary
Data storage and processing centers are large consumers of energy resources due to the development of cloud storage services, social networks, mobile applications. High dielectric constant and large RI (refractive index) make Ta2O5 an excellent candidate to be considered in a number of various applications It can serve as an insulating material in all sorts of “sandwich” structures such as MIS (metal/insulator/semiconductor) or MIM (metal/insulator/metal) [2,3]. Low absorption coefficient along with large refractive index is absolutely essential when it comes to antireflective coatings which is why Ta2O5 find its use in solar cells fabrication as well. Such optical properties are sought after during manufacture of optical filters and photonic crystals. The ALD method makes it possible to obtain 100% conformal films on the surface of substrates, which is relevant to the application of this method in the mentioned applications
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