Abstract
Aluminium (Al) doped zinc oxide (ZnO) has been considered as one of the promising transparent conducting oxide for wide applications in electronic devices. In this investigation, sol-gel spin coating process were employed to fabricate Al:ZnO on glass coated with indium tin oxide (ITO) substrate. In order to expose the effects of aluminium concentration on the structural and electrical properties of the ZnO films, different Al concentrations (1 at.%, 3 at.% and 5 at.%) were used. A field emission scanning electron microscope (FESEM) and a two point probe were employed to examined the material properties of the Al:ZnO films. Through the FESEM results, the Al:ZnO films show different morphologies behaviour with increasing the Al concentrations. Besides, the electrical conductivity was increased by increasing the dopant source and the lowest resistivity was obtained at 5 at.%. In general, the Al concentration exerts strong influence on the ZnO films properties. Keywords: Transparent conducting oxide, X-ray diffraction, sol gel
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