Abstract
In this thesis, low temperature (RT) zinc oxide (ZnO) films were directly grown on (01-12)sapphire substrates at 300oC by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O). Influences of post-annealing parameters including annealing temperature, annealing time interval and annealing atmosphere on the properties of post-annealing ZnO films were investigated. The structural, optical and transport properties of the post-annealing ZnO films were characterized by θ-to-2θ X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Hall measurements, photoluminescence spectroscopy (PL) and atomic force microscopy (AFM). Based on the XRD results, ZnO films were found to show c-axis preferred orientation. It was found that the transport and structural properties of the ZnO post-annealed films were highly influenced by annealing atmosphere. The most significant improvement in structural and transport properties were obtained for the ZnO film annealed in in N2 atmosphere at 900 oC for 10min. Under the optimum annealing condition, high transparency (~87%), low resistivity of 1.12x10-2 Ω∙cm and high mobility of 17.20 cm2/Vs were achieved in the ZnO films.
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