Abstract
Zinc oxide (ZnO) films were directly grown on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as precursors. Purified N2 was utilized to serve as carrier gas. Low-temperature (LT) ZnO films were deposited by process optimization including the admittances of DEZn and N2O and growth temperature for achieving high quality ZnO films. The physical properties and surface morphologies of ZnO films were investigated by θ-to-2θ X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). Based on the characterization data, both admittances of precursors and deposition temperature were optimized so that high quality ZnO films were achieved.
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