Abstract
KCN etching of the CuxS surface layer formed during the production process of Cu(In,Ga)S2 thin film solar cell absorbers as well as subsequent H2O2∕H2SO4 etching of the Cu(In,Ga)S2 surface have been investigated using x-ray photoelectron spectroscopy, x-ray excited Auger electron spectroscopy, and x-ray emission spectroscopy. We find that the KCN etching removes the CuxS layer—being identified as Cu2S—and that there is K deposited during this step, which is removed by the subsequent H2O2∕H2SO4 oxidation treatment. When a CdS buffer layer is deposited on the absorber directly after KCN etching, a K compound (KCO3) is observed at the CdS surface.
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